IXFN44N100Q3

Teknik Özellikler

Vgs Max

±30V

Pin Sayısı

4

Typical Turnon Delay Time Ns

48

Typical Fall Time Ns

28

Uzunluk

38.23mm

Typical Turnoff Delay Time Ns

66

Pulsed Drain Currentmax Idm

110A

Parça Durumu

Active

Hts

8541.29.00.95

Element Configuration

Single

Vgsth Max Id

6.5V @ 8mA

Typical Gate Charge Vgs Nc

264@10V

Fabrika Tedarik Süresi

30 Weeks

Pin Sayısı

4

Drain To Source Voltage Vdss

1000V

Maximum Power Dissipation Mw

960000

Montaj

Chassis Mount, Panel

Yayın Yılı

2011

Turn On Delay Time

48 ns

Eu Rohs

Compliant with Exemption

Mounting

Screw

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

1kV

Terminal Formu

UNSPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

Input Capacitance Ciss Max Vds

13600pF @ 25V

RoHS Durumu

ROHS3 Compliant

Maximum Drain Source Resistance Mohm

220@10V

Package Width

25.42(Max)

Maximum Continuous Drain Current A

38

Power Dissipation Max

960W Tc

Typical Input Capacitance Vds Pf

13600@25V

Terminal Pozisyonu

UPPER

Ppap

No

Yükseklik

9.6mm

Number Of Elements Per Chip

1

Seri

HiPerFET™

Typical Gate Charge10v Nc

264

Gate To Source Voltage Vgs

30V