IXFL100N50P

Teknik Özellikler

Maximum Gate Source Voltage V

±30

Rds On Max Id Vgs

52m Ω @ 50A, 10V

Current Continuous Drain Id25

70A Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

625W

Maximum Operating Temperature C

150

Supplier Package

ISOPLUS 264

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Kurşunsuz Kodu

yes

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Package Length

20.29(Max)

Fet Type

N-Channel

Pcb Changed

3

Number Of Elements

1

Fall Time Typ

26 ns

Eccn Us

EAR99

Reach Svhc

No SVHC

Channel Type

N

Terminal Sayısı

3

Rise Time

29ns

Continuous Drain Current Id

70A

Package Height

26.42(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

240nC @ 10V

Automotive

No

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Maximum Drain Source Voltage V

500

Transistor Element Material

SILICON

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Turn Off Delay Time

110 ns

Kılıf / Paket

ISOPLUS264™

Drainsource On Resistancemax

0.052Ohm

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Typical Gate Charge10v Nc

240

Gate To Source Voltage Vgs

30V

Seri

HiPerFET™, PolarHT™

Number Of Elements Per Chip

1