IXFK64N60P

Teknik Özellikler

Current Continuous Drain Id25

64A Tc

Rds On Max Id Vgs

96m Ω @ 500mA, 10V

Akım Değeri

64A

Maximum Gate Source Voltage V

±30

Additional Feature

AVALANCHE RATED

Maximum Operating Temperature C

150

Supplier Package

TO-264AA

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.04kW

Fet Type

N-Channel

Package Length

19.96(Max)

Drive Voltage Max Rds On Min Rds On

10V

Category

Power MOSFET

Kurşunsuz Kodu

yes

Package Height

26.16(Max)

Continuous Drain Current Id

64A

Automotive

No

Gate Charge Qg Max Vgs

200nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Rise Time

23ns

Fall Time Typ

24 ns

Number Of Elements

1

Channel Type

N

Reach Svhc

No SVHC

Pcb Changed

3

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Kılıf / Paket

TO-264-3, TO-264AA

Drainsource On Resistancemax

0.096Ohm

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Turn Off Delay Time

79 ns

Maximum Drain Source Voltage V

600

Transistor Element Material

SILICON

Number Of Elements Per Chip

1

Gate To Source Voltage Vgs

30V

Typical Gate Charge10v Nc

200

Seri

HiPerFET™, PolarHT™

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)