IXFK44N80P

Teknik Özellikler

Pcb Changed

3

Reach Svhc

No SVHC

Channel Type

N

Fall Time Typ

27 ns

Number Of Elements

1

Eccn Us

EAR99

Rise Time

22ns

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

198nC @ 10V

Automotive

No

Continuous Drain Current Id

44A

Package Height

26.16(Max)

Kurşunsuz Kodu

yes

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Package Length

19.96(Max)

Fet Type

N-Channel

Direnç

190MOhm

Radyasyon Dayanımı

No

Power Dissipation

1.04kW

Operating Mode

ENHANCEMENT MODE

Supplier Package

TO-264AA

Maximum Operating Temperature C

150

Additional Feature

AVALANCHE RATED

Maximum Gate Source Voltage V

±30

Rds On Max Id Vgs

190m Ω @ 22A, 10V

Current Continuous Drain Id25

44A Tc

Typical Rise Time Ns

22

Case Connection

DRAIN

Channel Mode

Enhancement

JESD-609 Kodu

e1

Montaj Tipi

Through Hole

Configuration

Single

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Seri

HiPerFET™, PolarHT™

Typical Gate Charge10v Nc

198

Gate To Source Voltage Vgs

30V

Svhc

Yes

Number Of Elements Per Chip

1