IXFK360N15T2

Teknik Özellikler

Rds On Max Id Vgs

4m Ω @ 60A, 10V

Current Continuous Drain Id25

360A Tc

Operating Mode

ENHANCEMENT MODE

Number Of Drivers

1

Output Voltage

150V

Additional Feature

AVALANCHE RATED

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Number Of Elements

1

Fall Time Typ

265 ns

Terminal Sayısı

3

Rise Time

170ns

Continuous Drain Current Id

360A

Gate Charge Qg Max Vgs

715nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Turn Off Delay Time

115 ns

Kılıf / Paket

TO-264-3, TO-264AA

Drainsource On Resistancemax

0.004Ohm

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Seri

GigaMOS™

Case Connection

DRAIN

JESD-609 Kodu

e1

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

1670W Tc

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

47500pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

30 Weeks