IXFK32N80P

Teknik Özellikler

Pin Sayısı

3

Vgs Max

±30V

Typical Fall Time Ns

24

Typical Turnon Delay Time Ns

30

Typical Turnoff Delay Time Ns

85

Number Of Channels

1 Channel

Pd Power Dissipation

830 W

Parça Durumu

Active

Tab

Tab

Minimum Operating Temperature

- 55 C

Element Configuration

Single

Typical Gate Charge Vgs Nc

150@10V

Fabrika Tedarik Süresi

30 Weeks

Threshold Voltage

5V

Vgsth Max Id

5V @ 8mA

Pin Sayısı

3

Maximum Power Dissipation Mw

830000

Yayın Yılı

2006

Montaj

Through Hole

Montaj Stili

Through Hole

Eu Rohs

Compliant

Avalanche Energy Rating Eas

2000 mJ

Transistor Application

SWITCHING

Rds On Drainsource Resistance

270 mOhms

Mounting

Through Hole

Drain To Source Breakdown Voltage

800V

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

8800pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Maximum Drain Source Resistance Mohm

270@10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qg Gate Charge

150 nC

Package Width

5.13(Max)

Maximum Continuous Drain Current A

32

Power Dissipation Max

830W Tc

Typical Input Capacitance Vds Pf

8800@25V

Ppap

No

Number Of Elements Per Chip

1