IXFK32N100P

Teknik Özellikler

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

75A

Seri

HiPerFET™, PolarP2™

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Montaj Tipi

Through Hole

Parça Durumu

Active

Element Configuration

Single

JESD-609 Kodu

e1

Case Connection

DRAIN

Qualification Status

Not Qualified

Drain To Source Voltage Vdss

1000V

Pin Sayısı

3

Fabrika Tedarik Süresi

30 Weeks

Vgsth Max Id

6.5V @ 1mA

Yayın Yılı

2008

Montaj

Through Hole

Kılıf / Paket

TO-264-3, TO-264AA

Drainsource On Resistancemax

0.32Ohm

Avalanche Energy Rating Eas

1500 mJ

Turn Off Delay Time

76 ns

Transistor Element Material

SILICON

Fet Type

N-Channel

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

1kV

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

14200pF @ 25V

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

32A

Gate Charge Qg Max Vgs

225nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Ambalaj

Tube

Rise Time

55ns

Kurşunsuz

Lead Free

Fall Time Typ

43 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED