IXFK21N100F

Teknik Özellikler

Fall Time Typ

15 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Reach Svhc

No SVHC

Terminal Sayısı

3

Rise Time

16ns

Ambalaj

Tube

RoHS Durumu

RoHS Compliant

Continuous Drain Current Id

21A

Input Capacitance Ciss Max Vds

5500pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

160nC @ 10V

Drain To Source Breakdown Voltage

1kV

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Power Dissipation

500W

Power Dissipation Max

500W Tc

Additional Feature

AVALANCHE RATED

Rds On Max Id Vgs

500m Ω @ 10.5A, 10V

Current Continuous Drain Id25

21A Tc

Case Connection

DRAIN

Element Configuration

Single

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

84A

Seri

HiPerRF™

Pin Sayısı

3

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

NO

Avalanche Energy Rating Eas

2500 mJ

Turn Off Delay Time

55 ns

Yayın Yılı

2002

Kılıf / Paket

TO-264-3, TO-264AA