IXFK180N25T

Teknik Özellikler

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

250

Minimum Operating Temperature C

-55

Process Technology

GigaMOS

Drainsource On Resistancemax

0.0129Ohm

Kılıf / Paket

TO-264-3, TO-264AA

Terminal Kaplaması

TIN SILVER COPPER

Seri

GigaMOS™

Typical Gate Charge10v Nc

345

Svhc

Yes

Number Of Elements Per Chip

1

Typical Rise Time Ns

33

Ds Breakdown Voltagemin

250V

Case Connection

DRAIN

Channel Mode

Enhancement

JESD-609 Kodu

e1

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Maximum Gate Source Voltage V

±20

Rds On Max Id Vgs

12.9m Ω @ 60A, 10V

Current Continuous Drain Id25

180A Tc

Power Dissipation

1.39kW

Operating Mode

ENHANCEMENT MODE

Supplier Package

TO-264

Maximum Operating Temperature C

150

Additional Feature

AVALANCHE RATED

Category

Power MOSFET

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Package Length

19.96(Max)

Fet Type

N-Channel

Pcb Changed

3

Channel Type

N

Number Of Elements

1

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

345nC @ 10V

Automotive

No