IXFK180N15P

Teknik Özellikler

Maximum Gate Source Voltage V

±20

Package Type

TO-264AA

Current Continuous Drain Id25

180A Tc

Rds On Max Id Vgs

11m Ω @ 90A, 10V

Maximum Operating Temperature C

175

Supplier Package

TO-264AA

Operating Mode

ENHANCEMENT MODE

Power Dissipation

830W

Additional Feature

AVALANCHE RATED

Polarity

N

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Radyasyon Dayanımı

No

Direnç

11MOhm

Fet Type

N-Channel

Package Length

19.96(Max)

Operating Temperature Classification

Military

Number Of Elements

1

Eccn Us

EAR99

Fall Time Typ

36 ns

Channel Type

N

Reach Svhc

No SVHC

Pcb Changed

3

Continuous Drain Current Id

180A

Package Height

26.16(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

240nC @ 10V

Automotive

No

Terminal Sayısı

3

Rise Time

32ns

ECCN Kodu

EAR99

Process Technology

HiperFET

Turn Off Delay Time

150 ns

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

150

Transistor Element Material

SILICON

Rad Hardened

No

Kılıf / Paket

TO-264-3, TO-264AA

Gate To Source Voltage Vgs

20V