IXFK120N30T

Teknik Özellikler

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

24m Ω @ 60A, 10V

Jesd30 Code

R-PSFM-T3

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

SINGLE

Power Dissipation Max

960W Tc

Additional Feature

AVALANCHE RATED

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Continuous Drain Current Id

120A

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

20000pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

265nC @ 10V

Terminal Sayısı

3

Ambalaj

Tube

Qualification Status

Not Qualified

Drain To Source Voltage Vdss

300V

Pin Sayısı

3

Fabrika Tedarik Süresi

30 Weeks

Vgsth Max Id

5V @ 4mA

ECCN Kodu

EAR99

Avalanche Energy Rating Eas

2500 mJ

Transistor Element Material

SILICON

Yayın Yılı

2009

Montaj

Through Hole

Kılıf / Paket

TO-264-3, TO-264AA

Drainsource On Resistancemax

0.024Ohm

REACH Uyumluluk Kodu

unknown

Pulsed Drain Currentmax Idm

330A

Seri

GigaMOS™

Terminal Kaplaması

TIN SILVER COPPER

Vgs Max

±20V

JESD-609 Kodu

e1