IXFK102N30P

Teknik Özellikler

Fall Time Typ

30 ns

Number Of Elements

1

Channel Type

N

Pcb Changed

3

Continuous Drain Current Id

102A

Package Height

26.16(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

224nC @ 10V

Automotive

No

Terminal Sayısı

3

Rise Time

28ns

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Fet Type

N-Channel

Package Length

19.96(Max)

Maximum Operating Temperature C

150

Supplier Package

TO-264

Operating Mode

ENHANCEMENT MODE

Power Dissipation

700W

Additional Feature

AVALANCHE RATED

Maximum Gate Source Voltage V

±20

Current Continuous Drain Id25

102A Tc

Rds On Max Id Vgs

33m Ω @ 500mA, 10V

JESD-609 Kodu

e1

Channel Mode

Enhancement

Case Connection

DRAIN

Typical Rise Time Ns

28

Configuration

Single

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

20V

Typical Gate Charge10v Nc

224

Seri

PolarHT™ HiPerFET™

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Number Of Elements Per Chip

1

Process Technology

HiperFET

Turn Off Delay Time

130 ns

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

300

Transistor Element Material

SILICON