IXFH96N15P

Teknik Özellikler

Rds On Max Id Vgs

24m Ω @ 500mA, 10V

Current Continuous Drain Id25

96A Tc

Maximum Gate Source Voltage V

±20

Additional Feature

AVALANCHE ENERGY RATED

Power Dissipation

480W

Operating Mode

ENHANCEMENT MODE

Supplier Package

TO-247

Maximum Operating Temperature C

175

Package Length

16.26(Max)

Radyasyon Dayanımı

No

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Rise Time

33ns

Terminal Sayısı

3

Gate Charge Qg Max Vgs

110nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Automotive

No

Package Height

21.46(Max)

Continuous Drain Current Id

96A

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Number Of Elements

1

Genişlik

5.3mm

Fall Time Typ

18 ns

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.024Ohm

Kılıf / Paket

TO-247-3

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

150

Turn Off Delay Time

66 ns

Minimum Operating Temperature C

-55

Svhc

Yes

Number Of Elements Per Chip

1

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Seri

PolarHT™ HiPerFET™

Gate To Source Voltage Vgs

20V

Typical Gate Charge10v Nc

110