IXFH58N20

Teknik Özellikler

Mounting

Through Hole

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

200V

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

260

Input Capacitance Ciss Max Vds

4400pF @ 25V

RoHS Durumu

ROHS3 Compliant

Maximum Drain Source Resistance Mohm

40@10V

Tepe Reflow Süresi (maks. sn)

10

Package Width

5.3(Max)

Maximum Continuous Drain Current A

58

Power Dissipation Max

300W Tc

Typical Input Capacitance Vds Pf

4400@25V

Ppap

No

Voltage Rated Dc

200V

Vgs Max

±20V

Pin Sayısı

3

Typical Turnon Delay Time Ns

18

Typical Fall Time Ns

16

Typical Turnoff Delay Time Ns

72

Parça Durumu

Not For New Designs

Svhc Exceeds Threshold

Yes

Tab

Tab

Hts

8541.29.00.95

Element Configuration

Single

Threshold Voltage

4V

Vgsth Max Id

4V @ 4mA

Typical Gate Charge Vgs Nc

190@10V

Fabrika Tedarik Süresi

8 Weeks

Pin Sayısı

3

Maximum Power Dissipation Mw

300000

Dual Supply Voltage

200V

Yayın Yılı

2000

Montaj

Through Hole

Recovery Time

200 ns

Eu Rohs

Compliant with Exemption

Package Length

16.26(Max)