IXFH52N50P2

Teknik Özellikler

Channel Mode

Enhancement

Case Connection

DRAIN

Typical Rise Time Ns

10

JESD-609 Kodu

e1

Montaj Tipi

Through Hole

Configuration

Single Dual Drain

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Typical Gate Charge10v Nc

113

Gate To Source Voltage Vgs

30V

Seri

HiPerFET™, PolarHV™

Svhc

Yes

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

500

Transistor Element Material

SILICON

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Drainsource On Resistancemax

0.12Ohm

Qualification Status

Not Qualified

Pcb Changed

3

Number Of Elements

1

Eccn Us

EAR99

Channel Type

N

Terminal Sayısı

3

Continuous Drain Current Id

52A

Package Height

21.46(Max)

Automotive

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

113nC @ 10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Package Length

16.26(Max)

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Power Dissipation

960W

Maximum Operating Temperature C

150

Supplier Package

TO-247

Additional Feature

AVALANCHE RATED

Maximum Gate Source Voltage V

±30