IXFH320N10T2

Teknik Özellikler

Fet Type

N-Channel

Package Length

16.26(Max)

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Continuous Drain Current Id

320A

Package Height

21.46(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

430nC @ 10V

Automotive

No

Terminal Sayısı

3

Rise Time

46ns

Fall Time Typ

177 ns

Number Of Elements

1

Eccn Us

EAR99

Channel Type

N

Pcb Changed

3

Current Continuous Drain Id25

320A Tc

Rds On Max Id Vgs

3.5m Ω @ 100A, 10V

Maximum Gate Source Voltage V

±20

Additional Feature

AVALANCHE RATED

Maximum Operating Temperature C

175

Supplier Package

TO-247

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1kW

Number Of Elements Per Chip

1

Svhc

Yes

Gate To Source Voltage Vgs

20V

Typical Gate Charge10v Nc

430

Seri

HiPerFET™, TrenchT2™

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Configuration

Single

Montaj Tipi

Through Hole

JESD-609 Kodu

e1

Case Connection

DRAIN

Channel Mode

Enhancement

Typical Rise Time Ns

46

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Kılıf / Paket

TO-247-3