IXFH30N50P

Teknik Özellikler

ECCN Kodu

EAR99

Kılıf / Paket

TO-247-3

Rad Hardened

No

Maximum Drain Source Voltage V

500

Transistor Element Material

SILICON

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Turn Off Delay Time

82 ns

Svhc

Yes

Operating Temp Range

-55C to 150C

Number Of Elements Per Chip

1

Tip

Power MOSFET

Typical Gate Charge10v Nc

70

Gate To Source Voltage Vgs

30V

Seri

HiPerFET™, PolarHT™

Montaj Tipi

Through Hole

Configuration

Single

Channel Mode

Enhancement

Case Connection

DRAIN

Typical Rise Time Ns

24

Rds On Max Id Vgs

200m Ω @ 15A, 10V

Current Continuous Drain Id25

30A Tc

Akım Değeri

30A

Package Type

TO-247AD

Maximum Gate Source Voltage V

±30

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Power Dissipation

460W

Maximum Operating Temperature C

150

Supplier Package

TO-247AD

Package Length

16.26(Max)

Operating Temperature Classification

Military

Radyasyon Dayanımı

No

Direnç

200MOhm

Fet Type

N-Channel

Category

Power MOSFET

Kurşunsuz Kodu

yes

Polarity

N

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3