IXFH26N50P

Teknik Özellikler

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Power Dissipation

400W

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Standard Package Name

TO-247

Maximum Gate Source Voltage V

±30

Akım Değeri

26A

Current Continuous Drain Id25

26A Tc

Rds On Max Id Vgs

230m Ω @ 13A, 10V

Channel Type

N

Eccn Us

EAR99

Fall Time Typ

20 ns

Number Of Elements

1

Genişlik

5.3mm

Pcb Changed

3

Automotive

No

Gate Charge Qg Max Vgs

60nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Height

21.45(Max)

Continuous Drain Current Id

26A

Rise Time

25ns

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Category

Power MOSFET

Kurşunsuz Kodu

yes

Direnç

230MOhm

Fet Type

N-Channel

Package Length

16.24(Max)

Turn Off Delay Time

58 ns

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

500

Kılıf / Paket

TO-247-3

Qualification Status

Not Qualified

Lead Shape

Through Hole

JESD-609 Kodu

e1

Typical Rise Time Ns

25

Channel Mode

Enhancement