IXFH20N60

Teknik Özellikler

Rds On Max Id Vgs

350m Ω @ 10A, 10V

Current Continuous Drain Id25

20A Tc

Akım Değeri

20A

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Power Dissipation

300W

Reverse Recovery Time

250 ns

Fet Type

N-Channel

Direnç

350MOhm

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Rise Time

43ns

HTS Kodu

8541.29.00.95

Continuous Drain Current Id

20A

Nem Hassasiyeti (MSL)

Not Applicable

Gate Charge Qg Max Vgs

170nC @ 10V

Number Of Elements

1

Fall Time Typ

40 ns

Reach Svhc

No SVHC

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Kılıf / Paket

TO-247-3

Transistor Element Material

SILICON

Turn Off Delay Time

70 ns

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Gate To Source Voltage Vgs

20V

Seri

HiPerFET™

Montaj Tipi

Through Hole

Case Connection

DRAIN

JESD-609 Kodu

e1

Power Dissipation Max

300W Tc

Terminal

Through Hole

Voltage Rated Dc

600V

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

600V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nominal Vgs

4.5 V

Ambalaj

Tube

Weight

6g