IXFH160N15T2

Teknik Özellikler

Current Continuous Drain Id25

160A Tc

Rds On Max Id Vgs

9m Ω @ 80A, 10V

Terminal Pozisyonu

SINGLE

Power Dissipation Max

880W Tc

Additional Feature

AVALANCHE RATED

Jesd30 Code

R-PSFM-T3

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

15000pF @ 25V

Continuous Drain Current Id

160A

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

253nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Kurşunsuz

Lead Free

Ambalaj

Tube

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

150V

Pin Sayısı

3

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

30 Weeks

ECCN Kodu

EAR99

Vgsth Max Id

4.5V @ 1mA

Kılıf / Paket

TO-247-3

Montaj

Through Hole

Yayın Yılı

2010

REACH Uyumluluk Kodu

unknown

Drainsource On Resistancemax

0.009Ohm

Avalanche Energy Rating Eas

1500 mJ

Transistor Element Material

SILICON

Vgs Max

±20V

Pulsed Drain Currentmax Idm

440A

Seri

GigaMOS™, HiPerFET™, TrenchT2™

Terminal Kaplaması

TIN SILVER COPPER