IXFH15N100P

Teknik Özellikler

Vgsth Max Id

6.5V @ 1mA

Fabrika Tedarik Süresi

30 Weeks

Drain To Source Voltage Vdss

1000V

Pin Sayısı

3

Transistor Element Material

SILICON

Turn Off Delay Time

44 ns

Avalanche Energy Rating Eas

500 mJ

Yayın Yılı

2008

Kılıf / Paket

TO-247-3

Montaj

Through Hole

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Seri

HiPerFET™, PolarP2™

Pulsed Drain Currentmax Idm

40A

Gate To Source Voltage Vgs

30V

Vgs Max

±30V

Case Connection

DRAIN

JESD-609 Kodu

e1

Element Configuration

Single

Montaj Tipi

Through Hole

Parça Durumu

Active

Rds On Max Id Vgs

760m Ω @ 500mA, 10V

Current Continuous Drain Id25

15A Tc

Power Dissipation

543W

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSFM-T3

Additional Feature

AVALANCHE RATED

Power Dissipation Max

543W Tc

Kurşunsuz Kodu

yes

Drain To Source Breakdown Voltage

1kV

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Direnç

760MOhm

Fet Type

N-Channel

Number Of Elements

1

Fall Time Typ

58 ns

Kurşunsuz

Lead Free

Rise Time

44ns

Ambalaj

Tube