IXFH12N90P

Teknik Özellikler

Current Continuous Drain Id25

12A Tc

Rds On Max Id Vgs

900m Ω @ 6A, 10V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

380W

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Fall Time Typ

68 ns

Number Of Elements

1

Reach Svhc

No SVHC

Continuous Drain Current Id

12A

Gate Charge Qg Max Vgs

56nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Rise Time

34ns

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Turn Off Delay Time

50 ns

Transistor Element Material

SILICON

Kılıf / Paket

TO-247-3

Drainsource On Resistancemax

0.9Ohm

Gate To Source Voltage Vgs

30V

Seri

HiPerFET™, PolarP2™

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Kodu

e1

Case Connection

DRAIN

Montaj Tipi

Through Hole

Power Dissipation Max

380W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Nominal Vgs

3.5 V

Drain To Source Breakdown Voltage

900V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

3080pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Pin Sayısı

3

Fabrika Tedarik Süresi

30 Weeks