IXFH12N100F

Teknik Özellikler

Current Continuous Drain Id25

12A Tc

Rds On Max Id Vgs

1.05 Ω @ 6A, 10V

Jedec95 Code

TO-247

Power Dissipation Max

300W Tc

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Power Dissipation

300W

Radyasyon Dayanımı

No

Fet Type

N-Channel

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

1kV

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

2700pF @ 25V

Continuous Drain Current Id

12A

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

77nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Kurşunsuz

Lead Free

Rise Time

9.8ns

Ambalaj

Tube

Number Of Elements

1

Fall Time Typ

12 ns

Reach Svhc

No SVHC

Pin Sayısı

3

Drain To Source Voltage Vdss

1000V

Fabrika Tedarik Süresi

30 Weeks

Threshold Voltage

3V

ECCN Kodu

EAR99

Vgsth Max Id

5.5V @ 4mA

Yayın Yılı

2005

Kılıf / Paket

TO-3P-3 Full Pack

Montaj

Through Hole

Turn Off Delay Time

31 ns

Transistor Element Material

SILICON

Pin Sayısı

3

Vgs Max

±20V

Pulsed Drain Currentmax Idm

48A