IXFH120N15P

Teknik Özellikler

JESD-609 Kodu

e1

Typical Rise Time Ns

42

Case Connection

DRAIN

Channel Mode

Enhancement

Configuration

Single

Montaj Tipi

Through Hole

Seri

PolarHT™ HiPerFET™

Gate To Source Voltage Vgs

20V

Typical Gate Charge10v Nc

150

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Number Of Elements Per Chip

1

Svhc

Yes

Minimum Operating Temperature C

-55

Turn Off Delay Time

85 ns

Process Technology

HiperFET

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

150

Drainsource On Resistancemax

0.016Ohm

Kılıf / Paket

TO-247-3

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Lead Shape

Through Hole

Channel Type

N

Reach Svhc

No SVHC

Eccn Us

EAR99

Fall Time Typ

26 ns

Number Of Elements

1

Genişlik

5.3mm

Pcb Changed

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

150nC @ 10V

Automotive

No

Continuous Drain Current Id

120A

Package Height

21.45(Max)

Rise Time

42ns

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Fet Type

N-Channel