IXFB44N100P

Teknik Özellikler

Power Dissipation

1.25kW

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Power Dissipation Max

1250W Tc

Current Continuous Drain Id25

44A Tc

Rds On Max Id Vgs

220m Ω @ 22A, 10V

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

56 ns

Gate Charge Qg Max Vgs

305nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

19000pF @ 25V

Continuous Drain Current Id

44A

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Rise Time

68ns

Ambalaj

Tube

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

Drain To Source Breakdown Voltage

1kV

Fet Type

N-Channel

Transistor Application

SWITCHING

Turn Off Delay Time

90 ns

Avalanche Energy Rating Eas

2000 mJ

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.22Ohm

Kılıf / Paket

TO-264-3, TO-264AA

Montaj

Through Hole

Yayın Yılı

2008

Pin Sayısı

3

Drain To Source Voltage Vdss

1000V

Qualification Status

Not Qualified

Vgsth Max Id

6.5V @ 1mA

Fabrika Tedarik Süresi

26 Weeks

Element Configuration

Single

JESD-609 Kodu

e1

Case Connection

DRAIN