IXFB30N120P

Teknik Özellikler

JESD-609 Kodu

e1

Typical Rise Time Ns

60

Case Connection

DRAIN

Channel Mode

Enhancement

Configuration

Single

Montaj Tipi

Through Hole

Seri

HiPerFET™, PolarP2™

Gate To Source Voltage Vgs

30V

Typical Gate Charge10v Nc

310

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Number Of Elements Per Chip

1

Turn Off Delay Time

95 ns

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

1200

Kılıf / Paket

TO-264-3, TO-264AA

Qualification Status

Not Qualified

Channel Type

N

Number Of Elements

1

Fall Time Typ

56 ns

Pcb Changed

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

310nC @ 10V

Automotive

No

Continuous Drain Current Id

30A

Package Height

26.59(Max)

Rise Time

60ns

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Fet Type

N-Channel

Package Length

20.29(Max)

Supplier Package

PLUS 264

Maximum Operating Temperature C

150

Power Dissipation

1.25kW

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Maximum Gate Source Voltage V

±30