SPP80P06PHXKSA1

Teknik Özellikler

Kurşunsuz

Lead Free

Fall Time Typ

30 ns

Rise Time

18ns

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

23m Ω @ 64A, 10V

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

80A

Turn Off Delay Time

56 ns

Vgs Max

±20V

Vgsth Max Id

4V @ 5.5mA

Terminal Pozisyonu

SINGLE

Additional Feature

AVALANCHE RATED

Seri

SIPMOS®

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-220-3

Kurşunsuz Kodu

yes

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Max Dual Supply Voltage

-60V

Power Dissipation Max

340W Tc

Current Continuous Drain Id25

80A Tc

Jedec95 Code

TO-220AB

Pin Sayısı

3

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Halogen Free

Halogen Free

Parça Durumu

Active

Yayın Yılı

1999

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

173nC @ 10V

Fet Type

P-Channel

Power Dissipation

340W

Drain To Source Voltage Vdss

60V