SPP100N03S2-03

Teknik Özellikler

Fet Type

N-Channel

Gate Charge Qg Max Vgs

150nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

Yayın Yılı

2003

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Input Capacitance Ciss Max Vds

7020pF @ 25V

Jesd30 Code

R-PSFM-T3

Ambalaj

Tube

Number Of Elements

1

Voltage Rated Dc

30V

Terminal Sayısı

3

RoHS Durumu

Non-RoHS Compliant

Pin Sayısı

3

Jedec95 Code

TO-220AB

Current Continuous Drain Id25

100A Tc

Drainsource On Resistancemax

0.0033Ohm

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Power Dissipation Max

300W Tc

Additional Feature

AVALANCHE RATED

Seri

OptiMOS™

Vgs Max

±20V

Akım Değeri

100A

Terminal Pozisyonu

SINGLE

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-220-3

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e0

Rise Time

40ns

Rds On Max Id Vgs

3.3m Ω @ 80A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Contains Lead

Avalanche Energy Rating Eas

810 mJ