SPN01N60C3

Teknik Özellikler

Gate To Source Voltage Vgs

20V

HTS Kodu

8541.29.00.95

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

300mA

Element Configuration

Single

Jesd30 Code

R-PDSO-G4

RoHS Durumu

Non-RoHS Compliant

Vgs Max

±20V

Turn Off Delay Time

60 ns

Parça Durumu

Obsolete

Current Continuous Drain Id25

300mA Ta

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

6 Ω @ 500mA, 10V

ECCN Kodu

EAR99

Fall Time Typ

30 ns

Vgsth Max Id

3.7V @ 250μA

Input Capacitance Ciss Max Vds

100pF @ 25V

Pin Sayısı

4

Akım Değeri

300mA

JESD-609 Kodu

e3

Voltage Rated Dc

650V

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

3 V

Power Dissipation

1.8W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

650V

Terminal Formu

GULL WING

Fet Type

N-Channel

Terminal Pozisyonu

DUAL

Terminal Kaplaması

MATTE TIN

Montaj

Surface Mount

Qualification Status

Not Qualified

Number Of Elements

1

Rise Time

30ns

Pulsed Drain Currentmax Idm

1.6A

REACH Uyumluluk Kodu

unknown

Yayın Yılı

2004