SPD30P06PGBTMA1

Teknik Özellikler

Fet Type

P-Channel

Pin Sayısı

3

Additional Feature

AVALANCHE RATED

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Halogen Free

Not Halogen Free

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 1.7mA

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fabrika Tedarik Süresi

18 Weeks

Kurşunsuz

Contains Lead

Current Continuous Drain Id25

30A Tc

Number Of Elements

1

Parça Durumu

Active

Kurşunsuz Kodu

no

Avalanche Energy Rating Eas

250 mJ

Turn Off Delay Time

30 ns

Yayın Yılı

1999

Drain To Source Voltage Vdss

60V

Case Connection

DRAIN

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation Max

125W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

30A

Fall Time Typ

20 ns

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.075Ohm

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

125W

Qualification Status

Not Qualified

Seri

SIPMOS®

Rds On Max Id Vgs

75m Ω @ 21.5A, 10V

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

48nC @ 10V

Input Capacitance Ciss Max Vds

1535pF @ 25V