SPD30N03S2L10GBTMA1

Teknik Özellikler

Parça Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

30A Tc

Number Of Elements

1

Input Capacitance Ciss Max Vds

1550pF @ 25V

Jesd30 Code

R-PSSO-G2

Turn Off Delay Time

27 ns

Turn On Delay Time

6.1 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Drain To Source Voltage Vdss

30V

Rise Time

13ns

Yayın Yılı

2002

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Terminal Formu

GULL WING

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Ds Breakdown Voltagemin

30V

Power Dissipation Max

100W Tc

Continuous Drain Current Id

30A

Fall Time Typ

17 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Fet Type

N-Channel

RoHS Durumu

RoHS Compliant

Gate To Source Voltage Vgs

20V

Additional Feature

AVALANCHE RATED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Power Dissipation

100W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj

Surface Mount

Rds On Max Id Vgs

10m Ω @ 30A, 10V

Seri

OptiMOS™

Gate Charge Qg Max Vgs

41.8nC @ 10V

Transistor Element Material

SILICON