SPD09P06PLGBTMA1

Teknik Özellikler

Kurşunsuz

Contains Lead

Fabrika Tedarik Süresi

18 Weeks

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgsth Max Id

2V @ 250μA

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

21nC @ 10V

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Rds On Max Id Vgs

250m Ω @ 6.8A, 10V

Seri

SIPMOS®

Qualification Status

Not Qualified

Halogen Free

Not Halogen Free

Power Dissipation

42W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drainsource On Resistancemax

0.25Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Jedec95 Code

TO-252AB

Pin Sayısı

3

Fet Type

P-Channel

Continuous Drain Current Id

9.7A

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation Max

42W Tc

Pin Sayısı

4

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Terminal Formu

GULL WING

Vgs Max

±20V

Max Dual Supply Voltage

-60V

Drain To Source Voltage Vdss

60V

Yayın Yılı

2008

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

70 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE