SPD07N60S5

Teknik Özellikler

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Voltage Rated Dc

650V

Additional Feature

AVALANCHE RATED, HIGH VOLTAGE

Power Dissipation

83W

Pin Sayısı

3

RoHS Durumu

Non-RoHS Compliant

Vgsth Max Id

5.5V @ 350μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Power Dissipation Max

83W Tc

Jedec95 Code

TO-252AA

Transistor Element Material

SILICON

Akım Değeri

7.3A

Yüzey Montaj

YES

Terminal Formu

GULL WING

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

2005

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Rise Time

40ns

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Terminal

SMD/SMT

Rds On Max Id Vgs

600m Ω @ 4.6A, 10V

Dual Supply Voltage

600V

Nominal Vgs

4.5 V

Montaj Tipi

Surface Mount

Direnç

600mOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

35nC @ 10V

Current Continuous Drain Id25

7.3A Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Fall Time Typ

20 ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Seri

CoolMOS™