SPD07N20GBTMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Vgsth Max Id

4V @ 1mA

Pin Sayısı

4

RoHS Durumu

RoHS Compliant

Power Dissipation

40W

Additional Feature

AVALANCHE RATED

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Power Dissipation Max

40W Tc

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

40

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

Max Dual Supply Voltage

200V

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2005

Pulsed Drain Currentmax Idm

28A

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Contains Lead

Rise Time

40ns

Rds On Max Id Vgs

400m Ω @ 4.5A, 10V

Montaj

Surface Mount

Gate Charge Qg Max Vgs

31.5nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

10 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Fall Time Typ

30 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

7A Tc

Input Capacitance Ciss Max Vds

530pF @ 25V

Seri

SIPMOS®

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

7A

Halogen Free

Not Halogen Free

Drainsource On Resistancemax

0.4Ohm