SPB18P06P

Teknik Özellikler

Transistor Element Material

SILICON

Yayın Yılı

2006

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Akım Değeri

-18.6A

Rds On Max Id Vgs

130m Ω @ 13.2A, 10V

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Input Capacitance Ciss Max Vds

860pF @ 25V

Additional Feature

AVALANCHE RATED

Current Continuous Drain Id25

18.7A Ta

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

81.1W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Qualification Status

Not Qualified

Kurşunsuz

Contains Lead

HTS Kodu

8541.29.00.95

Voltage Rated Dc

-60V

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Case Connection

DRAIN

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

60V

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e0

Terminal Formu

GULL WING

Vgsth Max Id

4V @ 1mA

Seri

SIPMOS®

Configuration

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

74.8A

Gate Charge Qg Max Vgs

28nC @ 10V

Drainsource On Resistancemax

0.13Ohm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Sıcaklığı (°C)

220

Parça Durumu

Obsolete

Vgs Max

±20V

Pin Sayısı

4

Continuous Drain Current Id

18.7A