SPB04N60S5ATMA1

Teknik Özellikler

Qualification Status

Not Qualified

Voltage Rated Dc

600V

Fall Time Typ

15 ns

Halogen Free

Halogen Free

Input Capacitance Ciss Max Vds

580pF @ 25V

Current Continuous Drain Id25

4.5A Tc

Rise Time

30ns

Akım Değeri

4.5A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Turn On Delay Time

55 ns

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Currentmax Idm

9A

Gate Charge Qg Max Vgs

22.9nC @ 10V

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

4.5A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

50W

Montaj

Surface Mount

Max Dual Supply Voltage

600V

Kurşunsuz

Lead Free

Turn Off Delay Time

60 ns

Terminal Kaplaması

Tin (Sn)

Rds On Max Id Vgs

950m Ω @ 2.8A, 10V

Terminal Sayısı

2

Additional Feature

AVALANCHE RATED

Yayın Yılı

2005

Kurşunsuz Kodu

no

Power Dissipation Max

50W Tc

Pin Sayısı

4

Vgs Max

±20V

Parça Durumu

Obsolete

Element Configuration

Single

Drainsource On Resistancemax

0.95Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED