IRLU120NPBF

Teknik Özellikler

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Current Continuous Drain Id25

10A Tc

Rds On Max Id Vgs

185m Ω @ 6A, 10V

Nominal Vgs

2 V

Element Configuration

Single

Input Capacitance Ciss Max Vds

440pF @ 25V

Vgsth Max Id

2V @ 250μA

Genişlik

2.3876mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Parça Durumu

Active

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

85 mJ

Turn On Delay Time

4 ns

Power Dissipation Max

48W Tc

Uzunluk

6.7056mm

Vgs Max

±16V

Terminal Sayısı

3

Pin Sayısı

3

Gate To Source Voltage Vgs

16V

Gate Charge Qg Max Vgs

20nC @ 5V

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

100V

Turn Off Delay Time

23 ns

Yükseklik

6.22mm

Drive Voltage Max Rds On Min Rds On

4V 10V

Number Of Elements

1

Akım Değeri

10A

Power Dissipation

48W

Dual Supply Voltage

100V

Additional Feature

AVALANCHE RATED

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Montaj

Through Hole