IRLS3034TRLPBF

Teknik Özellikler

Power Dissipation

375W

Additional Feature

LOGIC LEVEL COMPATIBLE

Number Of Elements

1

Terminal Formu

GULL WING

Yükseklik

4.572mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain To Source Breakdown Voltage

40V

Turn Off Delay Time

97 ns

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0017Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

355 ns

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

195A

Radyasyon Dayanımı

No

Rise Time

827ns

Yayın Yılı

2009

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Case Connection

DRAIN

Montaj

Surface Mount

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Parça Durumu

Active

Transistor Element Material

SILICON

Jesd30 Code

R-PSSO-G2

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

2.5V @ 250μA

Genişlik

9.65mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration

Single

Input Capacitance Ciss Max Vds

10315pF @ 25V

Current Continuous Drain Id25

195A Tc

Rds On Max Id Vgs

1.7m Ω @ 195A, 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Kodu

EAR99