IRLIB9343PBF

Teknik Özellikler

Input Capacitance Ciss Max Vds

660pF @ 50V

Reach Svhc

No SVHC

Fall Time Typ

9.5 ns

Çalışma Sıcaklığı

-40°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Genişlik

4.826mm

Fet Type

P-Channel

Element Configuration

Single

Gate Charge Qg Max Vgs

47nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Voltage Rated Dc

-55V

Current Continuous Drain Id25

14A Tc

Radyasyon Dayanımı

No

Yayın Yılı

2004

Direnç

93MOhm

Vgsth Max Id

1V @ 250μA

Pulsed Drain Currentmax Idm

60A

Yükseklik

9.8mm

RoHS Durumu

ROHS3 Compliant

Dual Supply Voltage

-55V

Fabrika Tedarik Süresi

14 Weeks

Number Of Elements

1

Power Dissipation

33W

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Case Connection

ISOLATED

Rise Time

24ns

Nominal Vgs

-1 V

Rds On Max Id Vgs

105m Ω @ 3.4A, 10V

Turn Off Delay Time

21 ns

Uzunluk

10.6172mm

Terminal Sayısı

3

Continuous Drain Current Id

-14A

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Threshold Voltage

-1V

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

-55V