IRLHM620TR2PBF

Teknik Özellikler

Max Power Dissipation

2.7W

Rise Time

25ns

Kılıf / Paket

8-VQFN Exposed Pad

Montaj Tipi

Surface Mount

Power Dissipation

2.7W

Input Capacitance

3.62nF

Number Of Elements

1

Min. Çalışma Sıcaklığı

-55°C

Pin Sayısı

8

Yükseklik

900μm

RoHS Durumu

RoHS Compliant

Montaj

Surface Mount

Parça Durumu

Obsolete

Vgsth Max Id

1.1V @ 50μA

Recovery Time

62 ns

Turn On Delay Time

7.5 ns

Yayın Yılı

2013

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

20V

Number Of Channels

1

Radyasyon Dayanımı

No

Tedarikçi Cihaz Paketi

PQFN (3x3)

Current Continuous Drain Id25

26A Ta 40A Tc

Drain To Source Resistance

1.8mOhm

Ambalaj

Cut Tape (CT)

Rds On Max

2.5 mΩ

Gate Charge Qg Max Vgs

78nC @ 4.5V

Fet Type

N-Channel

Drain To Source Breakdown Voltage

20V

Genişlik

3.3mm

Gate To Source Voltage Vgs

12V

Threshold Voltage

800mV

Fall Time Typ

37 ns

Reach Svhc

No SVHC

Continuous Drain Current Id

26A

Maks. Çalışma Sıcaklığı

150°C

Input Capacitance Ciss Max Vds

3620pF @ 10V

Uzunluk

3.2766mm

Rds On Max Id Vgs

2.5mOhm @ 20A, 4.5V