IRLH5036TR2PBF

Teknik Özellikler

Threshold Voltage

1V

Gate To Source Voltage Vgs

16V

Genişlik

5.0038mm

Fall Time Typ

15 ns

Drain To Source Breakdown Voltage

60V

Fet Type

N-Channel

Rds On Max Id Vgs

4.4mOhm @ 50A, 10V

Turn Off Delay Time

28 ns

Uzunluk

5mm

Nominal Vgs

1 V

Maks. Çalışma Sıcaklığı

150°C

Continuous Drain Current Id

100A

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

5360pF @ 25V

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

60V

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Rds On Max

4.4 mΩ

Ambalaj

Cut Tape (CT)

Gate Charge Qg Max Vgs

90nC @ 10V

Current Continuous Drain Id25

20A Ta 100A Tc

Drain To Source Resistance

4.4mOhm

Vgsth Max Id

2.5V @ 150μA

Montaj

Surface Mount

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Yayın Yılı

2012

Recovery Time

42 ns

Turn On Delay Time

23 ns

Input Capacitance

5.36nF

Power Dissipation

160W

Max Power Dissipation

3.6W

Kılıf / Paket

8-PowerVDFN

Rise Time

48ns

Montaj Tipi

Surface Mount

RoHS Durumu

RoHS Compliant

Yükseklik

810μm

Pin Sayısı

8

Number Of Elements

1