IRL7472L1TRPBF

Teknik Özellikler

Fet Type

N-Channel

Genişlik

7.1mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

20082pF @ 25V

Reach Svhc

No SVHC

Max Junction Temperature Tj

175°C

Current Continuous Drain Id25

375A Tc

Gate Charge Qg Max Vgs

330nC @ 4.5V

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XBCC-N9

Vgsth Max Id

2.5V @ 250μA

Yayın Yılı

2009

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

765 mJ

Case Connection

DRAIN

Power Dissipation

3.8W

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Yükseklik

740μm

Drain To Source Breakdown Voltage

40V

Terminal Formu

NO LEAD

ECCN Kodu

EAR99

Threshold Voltage

1V

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Continuous Drain Current Id

68A

Terminal Sayısı

9

Uzunluk

9.15mm

Turn Off Delay Time

174 ns

Rds On Max Id Vgs

0.59m Ω @ 195A, 10V

Terminal Pozisyonu

BOTTOM

Number Of Channels

1

Drainsource On Resistancemax

0.00045Ohm