IRL6342TRPBF

Teknik Özellikler

Power Dissipation

2.5W

Vgs Max

±12V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Rise Time

12ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Fabrika Tedarik Süresi

15 Weeks

Additional Feature

HIGH RELIABILITY

Number Of Elements

1

Pulsed Drain Currentmax Idm

79A

Vgsth Max Id

1.1V @ 10μA

Parça Durumu

Not For New Designs

Montaj

Surface Mount

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Yayın Yılı

2011

Turn On Delay Time

6 ns

Direnç

14.6MOhm

Terminal Kaplaması

Matte Tin (Sn)

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Gate Charge Qg Max Vgs

11nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

9.9A Ta

Fall Time Typ

14 ns

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

1.1V

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Breakdown Voltage

30V

Fet Type

N-Channel