IRL520NSTRLPBF

Teknik Özellikler

Drain To Source Breakdown Voltage

100V

ECCN Kodu

EAR99

Threshold Voltage

2V

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Continuous Drain Current Id

10A

Terminal Sayısı

2

Uzunluk

10.668mm

Rds On Max Id Vgs

180m Ω @ 6A, 10V

Turn Off Delay Time

23 ns

Nominal Vgs

2 V

JESD-609 Kodu

e3

Akım Değeri

10A

Montaj

Surface Mount

Power Dissipation Max

3.8W Ta 48W Tc

Terminal

SMD/SMT

Parça Durumu

Active

Recovery Time

160 ns

Turn On Delay Time

4 ns

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Contains Lead, Lead Free

Vgs Max

±16V

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Pin Sayısı

3

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

260

Genişlik

9.65mm

Gate To Source Voltage Vgs

16V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

4V 10V

Fall Time Typ

22 ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

440pF @ 25V

Radyasyon Dayanımı

No

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Current Continuous Drain Id25

10A Tc

Voltage Rated Dc

100V