IRL1004STRRPBF

Teknik Özellikler

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs Max

±16V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Pin Sayısı

3

Power Dissipation Max

3.8W Ta 200W Tc

Montaj

Surface Mount

Parça Durumu

Obsolete

Turn On Delay Time

16 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0065Ohm

Drain To Source Breakdown Voltage

40V

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Continuous Drain Current Id

130A

Transistor Element Material

SILICON

Turn Off Delay Time

25 ns

Rds On Max Id Vgs

6.5m Ω @ 78A, 10V

Uzunluk

10.668mm

Terminal Sayısı

2

Case Connection

DRAIN

Rise Time

210ns

Avalanche Energy Rating Eas

700 mJ

Montaj Tipi

Surface Mount

Power Dissipation

150W

Number Of Elements

1

Yükseklik

4.826mm

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

1V @ 250μA

Pulsed Drain Currentmax Idm

520A

Tepe Reflow Süresi (maks. sn)

30

Yayın Yılı

2004

Radyasyon Dayanımı

No

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Current Continuous Drain Id25

130A Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)