IRL1004PBF

Teknik Özellikler

Terminal

Through Hole

Parça Durumu

Active

Akım Değeri

130A

Montaj

Through Hole

Power Dissipation Max

200W Tc

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

16 ns

Vgs Max

±16V

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Contact Plating

Tin

Pin Sayısı

3

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

ECCN Kodu

EAR99

Threshold Voltage

1V

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

40V

Nominal Vgs

1 V

Terminal Sayısı

3

Uzunluk

10.6426mm

Turn Off Delay Time

25 ns

Rds On Max Id Vgs

6.5m Ω @ 78A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

130A

Pulsed Drain Currentmax Idm

520A

Vgsth Max Id

1V @ 250μA

Yayın Yılı

2004

Direnç

6.5mOhm

Power Dissipation

200W

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

700 mJ

Jedec95 Code

TO-220AB

Rise Time

210ns

Case Connection

DRAIN

Dual Supply Voltage

40V

RoHS Durumu

ROHS3 Compliant

Yükseklik

8.77mm

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1