IRFZ48NSTRLPBF

Teknik Özellikler

Seri

HEXFET®

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1970pF @ 25V

Fet Type

N-Channel

Current Continuous Drain Id25

64A Tc

Fall Time Typ

50 ns

JESD-609 Kodu

e3

Turn On Delay Time

12 ns

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

81nC @ 10V

Direnç

14MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dual Supply Voltage

55V

Genişlik

9.65mm

Montaj

Surface Mount

Nominal Vgs

4 V

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

2

Drain To Source Breakdown Voltage

55V

Turn Off Delay Time

34 ns

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Reverse Recovery Time

100 ns

Case Connection

DRAIN

Number Of Elements

1

Continuous Drain Current Id

64A

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Threshold Voltage

4V

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

3.8W Ta 130W Tc

Vgs Max

±20V

Akım Değeri

64A

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Power Dissipation

130W

Voltage Rated Dc

55V