IRFZ44VZSPBF

Teknik Özellikler

Vgs Max

±20V

Power Dissipation Max

92W Tc

Tepe Reflow Süresi (maks. sn)

30

Terminal Formu

GULL WING

Akım Değeri

57A

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

4V

Parça Durumu

Not For New Designs

Gate To Source Voltage Vgs

20V

Power Dissipation

92W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage Rated Dc

60V

Vgsth Max Id

4V @ 250μA

Yükseklik

4.572mm

RoHS Durumu

ROHS3 Compliant

Rise Time

62ns

Transistor Application

SWITCHING

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rds On Max Id Vgs

12m Ω @ 34A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Uzunluk

10.668mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2003

Fet Type

N-Channel

Current Continuous Drain Id25

57A Tc

Fall Time Typ

38 ns

JESD-609 Kodu

e3

Seri

HEXFET®

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fabrika Tedarik Süresi

15 Weeks

Input Capacitance Ciss Max Vds

1690pF @ 25V

Dual Supply Voltage

60V

Genişlik

9.65mm

Nominal Vgs

4 V

Montaj

Surface Mount