IRFZ44VPBF

Teknik Özellikler

Montaj

Through Hole

Nominal Vgs

4 V

Genişlik

4.826mm

Dual Supply Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

67nC @ 10V

Turn On Delay Time

13 ns

Montaj Tipi

Through Hole

Fall Time Typ

57 ns

Current Continuous Drain Id25

55A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1812pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-220-3

Seri

HEXFET®

Continuous Drain Current Id

55A

Number Of Elements

1

Case Connection

DRAIN

Pin Sayısı

3

Turn Off Delay Time

40 ns

Drain To Source Breakdown Voltage

60V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Recovery Time

105 ns

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yükseklik

8.77mm

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

60V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation

115W

Transistor Element Material

SILICON

Akım Değeri

55A

Vgs Max

±20V

Power Dissipation Max

115W Tc

Jedec95 Code

TO-220AB

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ