IRFZ44NLPBF

Teknik Özellikler

Nominal Vgs

4 V

Montaj

Through Hole

Genişlik

4.826mm

Dual Supply Voltage

55V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

17.5MOhm

Gate Charge Qg Max Vgs

63nC @ 10V

Montaj Tipi

Through Hole

Turn On Delay Time

12 ns

JESD-609 Kodu

e3

Fall Time Typ

45 ns

Current Continuous Drain Id25

49A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1470pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®

Continuous Drain Current Id

49A

Number Of Elements

1

Case Connection

DRAIN

Pin Sayısı

3

Turn Off Delay Time

44 ns

Drain To Source Breakdown Voltage

55V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Yükseklik

9.65mm

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Voltage Rated Dc

55V

Power Dissipation

110W

Transistor Element Material

SILICON

Akım Değeri

49A

Vgs Max

±20V

Power Dissipation Max

3.8W Ta 94W Tc

Tepe Reflow Süresi (maks. sn)

30

Threshold Voltage

4V